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1/15 january 2006 stq1nk80zr-ap - stn1nk80z STD1NK80Z - STD1NK80Z-1 n-channel 800v - 13 ? - 1 a to-92 /sot-223/dpak/ipak zener - protected supermesh? mosfet table 1: general features typical r ds (on) = 13 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mos - fets including revolutionary mdmesh? products. applications ac adaptors and battery chargers swith mode power supplies (smps) table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw stq1nk80zr-ap stn1nk80z STD1NK80Z STD1NK80Z-1 800 v 800 v 800 v 800 v < 16 ? < 16 ? < 16 ? < 16 ? 0.3 a 0.25a 1.0 a 1.0 a 3 w 2.5 w 45 w 45 w to-92 (ammopack) 1 2 2 3 sot-223 1 3 dpak 3 2 1 ipak sales type marking package packaging stq1nk80zr-ap q1nk80zr to-92 ammopak stn1nk80z n1nk80z sot-223 tape & reel STD1NK80Zt4 d1nk80z dpak tape & reel STD1NK80Z-1 d1nk80z ipak tube rev. 3
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 2/15 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 1 a, di/dt 200 a/s, v dd 640 table 4: thermal data (#) when mounted on 1inch2 fr-4 board, 2 oz cu table 5: avalanche characteristics table 6: gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-92 sot-223 dpak/ipak v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20 k ? ) 800 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 0.3 0.25 1.0 a i d drain current (continuous) at t c = 100c 0.19 0.16 0.63 a i dm ( ) drain current (pulsed) 5 a p tot total dissipation at t c = 25c 3 2.5 45 w derating factor 0.025 0.02 0.36 w /c v esd(g-s) gate source esd (hbm-c= 100pf, r= 1.5k ?) 1000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c to-92 sot-223 dpak/ipak unit rthj-case thermal resistance junction-case max -- -- 2.78 c/w rthj-amb(#) thermal resistance junction-ambient max 120 50 100 c/w rthj-lead thermal resistance junction-lead max 40 -- -- c/w t l maximum lead temperature for soldering purpose 260 -- 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 50 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 electrical characteristics (t case =25c unless otherwise specified) table 7: on/off table 8: dynamic table 9: source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 0.5 a 13 16 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 0.5 a 0.8 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v , f = 1 mhz, v gs = 0 160 26 6.7 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 640v 9.5 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 0.5 a r g = 4.7 ? v gs = 10 v (see figure 21) 8 30 22 55 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640v, i d = 1.0 a, v gs = 10v (see figure 24) 7.7 1.4 4.5 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 1.0 5 a a v sd (1) forward on voltage i sd = 1.0 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.0 a, di/dt = 100 a/s v dd = 50 v, t j = 25c (see figure 22) 365 802 4.4 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.0 a, di/dt = 100 a/s v dd = 50 v, t j = 150c (see figure 22) 388 802.7 4.6 ns nc a
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 4/15 figure 3: safe operating area for sot-223 figure 4: safe operating area for to-92 figure 5: safe operating area for ipak-dpak figure 6: thermal impedance for sot-223 figure 7: thermal impedance for to-92 figure 8: thermal impedance for dpak-ipak
5/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 figure 9: output characteristics figure 10: transconductance figure 11: gate charge vs gate-source voltage figure 12: transfer characteristics figure 13: static drain-source on resistance figure 14: capacitance variations
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 6/15 figure 15: normalized gate thereshold volt - age vs temperature figure 16: source-drain diode forward char - acteristics figure 17: avalanche energy vs starting tj figure 18: normalized on resistance vs tem - perature figure 19: normalized bvdss vs temperature
7/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 figure 20: unclamped inductive load test cir - cuit figure 21: switching times test circuit for resistive load figure 22: test circuit for inductive load switching and diode recovery times figure 23: unclamped inductive wafeform figure 24: gate charge test circuit
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 8/15 in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
9/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 10/15 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
11/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 12/15 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
13/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 14/15 table 10: revision history date revision description of changes 08-jun-2005 1 first release 06-sep-2005 2 inserted ecopack indication 16-jan-2006 3 corrected value on table 3
15/15 stq1nk80zr-ap - stn1nk80z - STD1NK80Z - STD1NK80Z-1 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is granted b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subjec t t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are no t a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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